The figure above shows the combine It is noted that both breakdowns occur when a diode is in reverse bias condition.Zener breakdown occurs at a breakdown voltage of less than 4 V which is denoted as a Vz and avalanche breakdown occurs at a breakdown voltage of more than 6 V which denoted as a VBR.This critical value of reverse bias voltage at which reverse current rises unexpectedly and Avalanche breakdown occurs is known as the avalanche breakdown voltage. Encyclopaedia Britannica's editors oversee subject areas in which they have extensive knowledge, whether from years of experience gained by working on that content or via study for an advanced degree.... These energetic charge carriers collide with the atoms of the p-type and n-type material and produce the electron-hole pairs.The reverse current starts flowing in the junction because of which depletion region becomes entirely vanishes. History at your fingertips The depletion region develops at the junction where the P and N-type material contact.The P and N-type materials of the PN junction are not perfect, and they have some impurities in it, i.e., the p-type material has some electrons, and the N-type material has some hole in it. The depletion region regians it original position after the removal of the reverse voltageThe breakdown region of the ideal Zener diode in the VI curve is considered to be vertical. The graph shows that the voltage remains constant even after the variation of the current. Our editors will review what you’ve submitted and determine whether to revise the article.When the electrical force is removed, the newly freed electrons are recaptured by the atoms of the solid, which once again becomes a poor conductor of
When the reverse bias voltage starts to increase, the diode intentionally starts an avalanche effect at a predetermined voltage. Typically avalanche breakdown occurs at a breakdown voltage more than 6 V.Avalanche breakdown is not reversible while Zener breakdown is reversible.Avalanche Breakdown occurs due to the collision of accelerated charge carriers with the adjacent atoms and due to carrier multiplication. In Zener diodes with wider depletion layers and therefore higher breakdown voltages, the increase in current at the breakdown voltage is much more sudden, giving an abrupt reduction in the reverse resistance of the diode and a nearly vertical region to the diode´s reverse current characteristic.
Because the avalanche breakdown is uniform across the whole junction, the breakdown voltage is nearly constant with changing current when compared to a non-avalanche diode.The construction of the avalanche diode is similar to the The normal diode allows an electric current in one direction i.e.
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Wikipedia suggests the difference is this : in the zener effect, the electric field across the junction breaks bonds to release carriers; while in the avalanche effect it …
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